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Semiconductor - No more
Secondary education (EDU 329)
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Types of Semiconductors
Semiconductors are mainly classified into two categories:
- Intrinsic Semiconductor
- Extrinsic Semiconductor
Intrinsic Semiconductor
An intrinsic semiconductor material is chemically very pure and possesses poor conductivity. It has equal numbers of negative carriers (electrons) and positive carriers (holes).
Extrinsic Semiconductor
Where as an extrinsic semiconductor is an improved intrinsic semiconductor with a small amount of impurities added by a process, known as doping, which alters the electrical properties of the semiconductor and improves its conductivity. Depending on whether the added impurities have “extra” electrons or “missing” electrons determines how the bonding in the crystal lattice is affected as shown in figure, and therefore how the material’s electrical properties change.
The Doping of Semiconductors
The addition of a small percentage of impurity atoms in the intrinsic semiconductor (pure silicon or pure germanium) produces dramatic changes in their electrical properties. Depending on the type of impurity added, the extrinsic semiconductors can be divided in to two classes:
- N-type Semiconductors
- P-type Semiconductors
N-Type Semiconductor
Group V dopants are the atoms with an “extra” electron, in other words a valence shell with only one electron. When a semiconductor is doped with a Group V impurity it is called an n-type material, because the addition of these pentavalent impurities such as antimony, arsenic or phosphorous contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor. In an n-type semiconductor, the majority carrier, or the more abundant charge carrier, is the electron, and the minority carrier, or the less abundant charge carrier, is the hole.
The effect of this doping process on the relative conductivity can be explained by energy band diagram shown in figure. When donor impurities are added to an intrinsic semiconductor, allowable energy levels are introduced at a very small gap below the conduction band, as illustrated in figure. These new allowable levels are essentially a discrete level because the added impurity atoms are far apart in the crystal structure and hence their interaction is small. In the case of Silicon, the gap of the new discrete allowable energy level is only 0 eV (0 eV for germanium) below the conduction band, and therefore at room temperature almost all of the "fifth" electrons of the donor impurity are raised into the conduction band and the conductivity of the material increases considerable.
P-Type Semiconductor
Group III dopants are the atoms with a hole in their valence shell (only “missing” one electron), When a semiconductor is doped with a Group III impurity it is called a p-type material, The addition of these trivalent impurities such as boron, aluminum or gallium to an intrinsic semiconductor creates deficiencies of valence electrons, called "holes". In an p-type semiconductor, the majority carrier, or the more abundant charge carrier, is the hole, and the minority carrier, or the less abundant charge carrier, is the electron.
The effect of this doping process on the relative conductivity can be explained by energy band diagram shown in figure. When accepter impurities or P type impurities are added to the intrinsic semiconductor, they produce an allowable discrete energy levels which is just above the valance band, as shown in figure. Since a very small amount of energy (0 eV in case of Silicon and 0 eV in case of Germanium) is
Semiconductor - No more
Course: Secondary education (EDU 329)
